Prof. Ma Xiaohua graduated from Xi’an University of Electronic Science and Technology in 1996 with a major in Microelectronics. He is currently the director of the National Engineering Research Center for Wide Bandgap Semiconductor at Xidian University and the deputy director of the School of Integrated Circuit, as well as the director of the National Integrated Circuit Industry-Education Integration Innovation Platform. He is also the vice chairperson of the Shaanxi Provincial Committee of the Jiusan Society, a recipient of the Special Government Allowance of the State Council, and a national leading talent. For a long time, he has been engaged in fundamental innovation and key technology research on wide bandgap semiconductors. He has led over 20 major and key national research projects. His research achievements have been applied in major projects such as 5G communication, radar detection, and satellite communication, leading China’s third-generation semiconductor electronic devices into the international advanced ranks. He has published over 200 high-level papers and won one first prize and one second prize of the National Science and Technology Progress Award, as well as six first prizes of provincial and ministerial level.

Gallium nitride features a large bandgap, high breakdown field strength and a higher electron saturation velocity, which endows it with promising application prospects in high frequency, high power and high efficiency, and it can be widely used in microwave and radio frequency fields such as radar detection, satellite communication and 5G communication. For millimeter-wave devices, the four main indicators to be considered are frequency, power, efficiency and linearity. This report will introduce the domestic and international research and development status of gallium nitride millimeter-wave devices and the latest progress of our team from the above four aspects.

Prof. Kai Kang received the B. Eng degree from the Northwestern Polytechnical University, China in 2002, and the joint Ph.D. degree from the National University of Singapore, Singapore and Ecole Supérieure D’électricité, France in 2008. Dr. Kang was with the Institute of microelectronics, A*STAR, Singapore as a Senior Research Engineer, and with Global foundries as a Principle Engineer, respectively. Since June 2011, he has been a professor at the University of Electronic Science and Technology of China. His research interests are RF and RF & mm-Wave integrated circuits design and modeling of on-chip devices.

Since millimeter wave frequency bands are adopted in 5G communications, CMOS mm-wave circuits and systems attract tremendous attentions because of its low cost and high integration capability. However, circuits designers have to face to many challenges of CMOS process, such as the high loss substrate, low Q passive devices, high noise, and limited gain and output power. This paper will introduce technique to overcome these difficulties to design high performance wideband building blocks as well as transceiver chipsets for 5G communication.